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Creators/Authors contains: "Jamadi, Behdad"

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  1. ; ; (, IEEE)
    Free, publicly-accessible full text available May 25, 2026
  2. ; (, Proceedings of the Annual Government Microcircuit Applications & Critical Technology Conference (GOMACTech))
    Digital-to-Analog Converters (DACs) are inseparable fundamental components in radios that act as translator between digital signal processing and all types of transmitters including software-defined radios. Current Steering DACs (CS-DACs) are of interest because of their good linearity and high speed. In this article, a modification to the switching of a segmented CS-DAC is proposed through the use of a sub-DAC. The proposed techniques not only allow for reduced die area but also reduce power consumption while the static nonlinearity can be kept similar to the conventional segmented CS-DACs. The MATLAB model of the proposed DAC is tested for the performance of the 7 bit DAC under ideal and non-ideal cases and implemented in 22nm FDSOI technology with forward body biasing. The total power consumption of the proposed DAC is 2.4mW and it achieved FoM of 433. 
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    Free, publicly-accessible full text available March 19, 2026
  3. ; ; (, IEEE)
    Free, publicly-accessible full text available January 19, 2026
  4. ; ; (, IEEE (Proceedings of the 2024 IEEE NEWCAS Conference))
    This paper presents the design and performance evaluation of a class of Phase-Frequency Detectors (PFDs) implemented utilizing only logic gates. It is a suitable candidate for applications like All-Digital Phase-Locked Loops (ADPLLs) and Delay-Locked Loops (DLLs). The proposed design is laid out in 65 nm CMOS and 22 nm FD-SOI technology and it is validated using post-extracted simulations. According to the results the proposed PFD is blind zone free and exhibits a small dead zone of ≈ 7 ps and ≈ 9 ps with a detection range of ±2π at a frequency of 10 GHz and 8 GHz in 22 nm and 65 nm, respectively. The proposed design has jitter ≈ 448 fs in 22 nm and ≈ 1.2 ps in 65 nm. The proposed PFD occupies a layout area of 115.625 μm2 and consumes 7.2 μW in 22nm and the area of the design is 225.7 μm2 and consumes 11.03 μW in 65nm. 
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    Accepted Manuscript Full Text Available
  5. ; ; (, IEEE)
    Full Text Available